1TB (1000GB) Samsung 850 EVO 2.5

Спецификации на SSD твърд диск Samsung 850 EVO 2.5 1TB (1000GB) SATA 3 (6Gb/s) 540r / 520w

Samsung 850 EVO 1TB 2.5" SATA3, MZ-75E1T0B/EU, 8806086523042

Overview

About This Product

• Upgrade virtually every aspect of your computer’s performance with Samsung’s new 850 EVO, designed with state-of-the-art SSD advancements including 3D V-NAND technology. As the next generation beyond the bestselling 840 EVO, you’ll get the 850 EVO’s new 3 dimensional chip design that enables superior performance, greater reliability and superior energy efficiency so you can work and play faster and longer than ever before.

3D V-NAND Technology

• Samsung’s innovative 3D V-NAND flash memory architecture breaks through density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.

Incredible Read/Write Speeds

• Achieve incredible read/write performance to maximize your everyday computing experience with Samsung’s TurboWrite technology. You can obtain up to 1.9x faster performance than the award-winning Samsung 840 EVO. The 850 EVO delivers class-leading performance* in sequential read (540MB/s) and write (520MB/s) speeds. Plus, gain optimized random performance in all QD for better real-world performance.

* Performance compared to 3-Bit MLC-class SSD drives

Enhanced RAPID mode

• Samsung’s Magician software enables RAPID Mode for up to 2x faster performance* by utilizing unused PC memory (DRAM) as a high-speed cache. The newest version of Samsung Magician supports up to a 4 GB cache on a system with 16 GB of DRAM.

* Compared to same drive w/out RAPID enabled. Performance enhancement may vary depending on system hardware & configuration.

Specifications

• Type: Solid State Drive
• Interface: SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface
• Application: Consumer
• Client PCs: Storage
• Capacity: 1TB
  • * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

Key Features

• Sequential Read Speed
  • Up to 540 MB/sec Sequential Read
    • * Performance may vary based on system hardware & configuration
• Sequential Write Speed
  • Up to 520 MB/sec Sequential Write
    • * Performance may vary based on system hardware & configuration
• Random Read Speed
  • Random Read (4KB, QD32): Up to 98,000 IOPS Random Read
    • * Performance may vary based on system hardware & configuration
  • Random Read (4KB, QD1): Up to 10,000 IOPS Random Read
    • * Performance may vary based on system hardware & configuration
• Random Write Speed
  • Random Write (4KB, QD32): Up to 90,000 IOPS Random Write
    • * Performance may vary based on system hardware & configuration
  • Random Write (4KB, QD1): Up to 40,000 IOPS Random Write
    • * Performance may vary based on system hardware & configuration
• Memory Speed
  • Samsung 32 layer 3D V-NAND
  • Samsung 1GB Low Power DDR2 SDRAM
• Controller: Samsung MEX Controller
• Trim Support: Yes
• AES Encryption: AES 256 bit Encryption (Class 0) , TCG/Opal, IEEE1667 (Encrypted drive)

General

• Power Consumption (W): 50 mWatts
  • * Actual power consumption may vary depending on system hardware & configuration
  • *Average: 4.0 Watts *Maximum: 4.4 Watts (Burst mode)
  • * Actual power consumption may vary depending on system hardware & configuration
• Voltage: 5V ± 5% Allowable voltage
• Reliability (MTBF): 2 Million Hours Reliability (MTBF)
• Environmental Specs
  • Operating Temperature: 32ºF - 158ºF
• Form Factor: 2.5 inch Form Factor
• Dimensions (W x D x H): 3.94" x 2.75" x 0.27"
• Weight: 0.17 lb.

Гаранционен срок: 24 месеца
* Ако производителя дава по-голям гаранционен срок, гаранцията се поема от производителя, след изтичането на гаранцията дадена от София Компютърс.